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SPP15N60C3 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали SPP15N60C3
подробное описание детали  Isc N-Channel MOSFET Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

SPP15N60C3 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
Isc N-Channel MOSFET Transistor
SPP15N60C3
·
FEATURES
·
Ultra low effective capacitances
·
Low gate charge
·
Improved transconductance
·
Low gate drive power loss
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Switching applications
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGSS
Gate-Source Voltage
±
30
V
ID
Drain Current-Continuous@TC=25℃
TC=100℃
15
9.4
A
IDM
Drain Current-Single Pulsed
45
A
PD
Total Dissipation
156
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
0.8
℃
/W
Rth(ch-a)
Channel-to-ambient thermal resistance
62
℃
/W


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