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MLX90621 датащи(PDF) 7 Page - Melexis Microelectronic Systems |
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MLX90621 датащи(HTML) 7 Page - Melexis Microelectronic Systems |
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7 / 44 page ![]() MLX90621 16x4 IR array Datasheet 39001090621 Page 7 of 44 Datasheet IR16x4 Rev 3.0 15 September 2016 Electrical characteristics 5. All parameters are valid for TA = 25˚C, VDD =2.6V (unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Units Supplies External supply 1 VDD 2.5 2.6 3.3 V Supply current IDD No load 5 9 mA Sleep current Islp No load 7 µA Power On Reset POR level VPOR_up Power-up (full temp range) 2 2.2 2.4 V POR level VPOR_down Power –down (full temp range) 1.9 2.1 2.3 V POR hysteresis VPOR_hys Full temp range 0.1 V VDD rise time (10% to 90% of specified supply voltage) TPOR Ensure POR signal 100 µs I 2C compatible 2-wire interface Sensor chip Slave address SA Factory default 60 hex Input high voltage VIH (Ta, V) Over temperature and supply 0.7VDD V Input low voltage VIL (Ta, V) Over temperature and supply 0.3VDD V Output low voltage VOL SDA over temperature and supply, Isink = 6mA (FM mode) 0.6 V Output low voltage VOL SDA over temperature and supply, Isink = 20mA (FM+ mode) 0.4 V SCL leakage ISCL, leak VSCL=4V, Ta=+85°C 2 µA SDA leakage ISDA, leak VSDA=4V, Ta=+85°C 2 µA SCL capacitance CSCL Two dies MLX90670 + EEPROM 20 pF I 2C clock frequency SCLIR MLX90621 (FM+ mode) 1 MHz Acknowledge setup time Tsuac(MD) 8-th SCL falling edge, Master 0.45 µs Acknowledge hold time Thdac(MD) 9-th SCL falling edge, Master 0.45 µs Acknowledge setup time Tsuac(SD) 8-th SCL falling edge, Slave 0.45 µs Acknowledge hold time Thdac(SD) 9-th SCL falling edge, Slave 0.45 µs EEPROM Slave address SA Factory default 50 hex I 2C clock frequency SCLEEPROM EEPROM (FM mode) 400 kHz Data retention Ta = +85°C 200 years Erase/write cycles Ta = +25°C 1M Times Erase/write cycles Ta = +125°C 100K Times Erase cell time T_erase 5 ms Write cell time T_write 5 ms Table 4 Electrical specification parameters of MLX90621 1) The device can be supplied with VDD = 2.6…3.3V but the best performance is achieved at VDD=2.6V. For supply voltages above 2.7V a compensation algorithm should be applied for compensating the temperature readings. |
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