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MML09231HT1 датащи(PDF) 2 Page - NXP Semiconductors |
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MML09231HT1 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() Figure 1. Pin Connections (Top View) RFout/VDD RFin 18 27 36 N.C. 4 5 VBIAS N.C. Power Down N.C. GND N.C. Note: Exposed backside of the package is DC and RF ground. 2 RF Device Data Freescale Semiconductor, Inc. MML09231HT1 Table 4. Electrical Characteristics (VDD = 5 Vdc, 900 MHz, TA =25C, 50 ohm system, in Freescale Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 15.8 17.2 — dB Input Return Loss (S11) IRL — --15 — dB Output Return Loss (S22) ORL — --15 — dB Power Output @ 1dB Compression P1dB — 24.5 — dBm Third Order Input Intercept Point IIP3 — 20.2 — dBm Third Order Output Intercept Point OIP3 — 37.4 — dBm Reverse Isolation (S12) |S12| — --21 — dB Noise Figure (1) NF — 0.36 — dB Supply Current (2) IDD 40 55 70 mA Supply Voltage VDD — 5 — V Supply Current in Power Down Mode IPD — 1.1 — mA Logic Voltage for Power Down (3) Input High Voltage Input Low Voltage VPD 2.2 0 — — VDD 0.5 V 1. Noise figure value calculated with connector losses removed. 2. DC current measured with no RF signal applied. 3. Limits derived from device characterization. Table 5. Functional Pin Description Pin Number Pin Function 1 VBIAS 2 RFin 3 No Connection 4 No Connection 5 No Connection 6 No Connection 7 RFout/Supply Voltage 8 Power Down (active high) Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22--A114) 1B, passes 700 V Machine Model (per EIA/JESD 22--A115) A Charge Device Model (per JESD 22--C101) IV Table 7. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 1 260 C |
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