 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
F3205Z датащи(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
F3205Z датащи(HTML) 2 Page - International Rectifier |
|
|
2 / 12 page  IRF3205ZS/L 2 www.irf.com Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.051 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 4.9 6.5 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 71 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 76 110 Qgs Gate-to-Source Charge ––– 21 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 30 ––– td(on) Turn-On Delay Time ––– 18 ––– tr Rise Time ––– 95 ––– td(off) Turn-Off Delay Time ––– 45 ––– ns tf Fall Time ––– 67 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 3450 ––– Coss Output Capacitance ––– 550 ––– Crss Reverse Transfer Capacitance ––– 310 ––– pF Coss Output Capacitance ––– 1940 ––– Coss Output Capacitance ––– 430 ––– Coss eff. Effective Output Capacitance ––– 640 ––– Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 75 (Body Diode) A ISM Pulsed Source Current ––– ––– 440 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 28 42 ns Qrr Reverse Recovery Charge ––– 25 38 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V f VGS = 10V e VDD = 28V ID = 66A RG = 6.8 Ω TJ = 25°C, IS = 66A, VGS = 0V e TJ = 25°C, IF = 66A, VDD = 25V di/dt = 100A/µs e Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 66A e VDS = VGS, ID = 250µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C MOSFET symbol showing the integral reverse p-n junction diode. VDS = 25V, ID = 66A ID = 66A VDS = 44V Conditions VGS = 10V e VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 20V VGS = -20V |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
