ISCD1835P datasheet(1/2 Pages) ISC

номер детали	ISCD1835P

подробное описание детали	isc Silicon PNP Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

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isc Website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon PNP Power Transistor

ISCD1835P

DESCRIPTION

·

Collector–Emitter Sustaining Voltage-

: VCEO(SUS) = -300 V(Min)

·

Low Collector Saturation Voltage-

: VCE(sat) = -1.0V(Max.)@ IC= -50mA

·

DPAK for Surface Mount Applications

·

Minimum Lot-to-Lot variations for robust device performance

and reliable operation

APPLICATIONS

·

Designed for line operated audio output amplifier,switchmode

power supply drivers and other switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-300

V

VCEO

Collector-Emitter Voltage

-300

V

VEBO

Emitter-Base Voltage

-3

V

IC

Collector Current-Continuous

-1

A

ICM

Collector Current-Peak

-0.75

A

PC

Collector Power Dissipation

TC=25℃

15

W

Collector Power Dissipation

Ta=25℃

1.56

Ti

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Thermal Resistance,Junction to Case

8.33

℃

/W

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Аналогичный номер детали - ISCD1835P

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