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6N80 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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6N80 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 6N80 · FEATURES · Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) · Avalanche Energy Specified · Fast Switching · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION. Switch-mode and resonant-mode Power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Plused 24 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃ /W Rth j-a Thermal Resistance, Junction to Ambient 40 ℃ /W |
Аналогичный номер детали - 6N80 |
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Аналогичное описание - 6N80 |
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