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2ST501T датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали 2ST501T
подробное описание детали  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2ST501T датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2ST501T
DESCRIPTION
·
Low Collector Saturation Voltage
·
High DC Current Gain
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Audio power amplifiers
·
Relay & solenoid drivers
·
Motor controls
·
General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO(SUS)
Collector-Emitter Voltage
330
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
12
A
PC
Collector Power Dissipation
@ TC=25℃
100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.25
℃
/W


Аналогичный номер детали - 2ST501T

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STMicroelectronics		 2ST501T STMICROELECTRONICS-2ST501T Datasheet
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