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65N06 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали 65N06
подробное описание детали  isc N-Channel MOSFET Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

65N06 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
65N06
FEATURES
·
Drain Current –ID=63A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 60V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 0.018Ω(Max)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
63
A
IDM
Drain Current-Single Plused
240
A
PD
Total Dissipation @TC=25℃
150
W
TJ
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.05
℃
/W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
℃
/W


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