4N65 datasheet(1/2 Pages) ISC

номер детали	4N65

подробное описание детали	isc N-Channel MOSFET Transistor

PDF	2 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

4N65

DESCRIPTION

·

Drain Current ID= 4A@ TC=25℃

·

Drain Source Voltage-

: VDSS= 650V(Min)

·

Fast Switching Speed

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for high efficiency switch mode power supply.

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

650

V

VGS

Gate-Source Voltage

±

30

V

ID

Drain Current-continuous@ TC=25℃

4

A

ID(puls)

Pulse Drain Current

16

A

Ptot

Total Dissipation@TC=25℃

36

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

·

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

3.47

℃

/W

Rth j-a

Thermal Resistance, Junction to Ambient

62.5

℃

/W

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4N65 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

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