| поискавой системы для электроныых деталей |
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3DD13005 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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3DD13005 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 3DD13005 DESCRIPTION · Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) · Collector Saturation Voltage : VCE(sat) = 0.6(Max) @ IC= 2.0A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in high-voltage, high-speed, power switching in inductive circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 4 A ICM Collector Current-peak 8 A IB Base Current 2 A PC Collector Power Dissipation Ta=25℃ 2 W Collector Power Dissipation TC=25℃ 75 Ti Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃ /W |
Аналогичный номер детали - 3DD13005 |
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Аналогичное описание - 3DD13005 |
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