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TC1268 датащи(PDF) 2 Page - Microchip Technology

номер детали TC1268
подробное описание детали  500mA Fixed Output, Fast Response CMOS LDO with Shutdown
PDF  12 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

TC1268 датащи(HTML) 2 Page - Microchip Technology

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TC1268
DS21379B-page 2
© 2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Power Dissipation................Internally Limited (Note 6)
Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V
Operating Temperature ............... -40°C < TJ < +125°C
Storage Temperature.......................... -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1268 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN =VOUT +1V, IL =100µA, CL =3.3µF, SHDN >VIH,TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VIN
Input Operating Voltage
2.7
6.0
V
Note 8
IOUTMAX
Maximum Output Current
500
——
mA
VOUT
Output Voltage
VR –2.5%
VR ±0.5%
VR +2.5%
V
Note 1
∆V
OUT/∆TVOUT Temperature Coefficient
40
ppm/°C
Note 2
∆V
OUT/∆VIN
Line Regulation
0.05
0.35
%(VR +1V) ≤ VIN ≤ 6V
∆VOUT/VOUT
Load Regulation
0.002
0.01
%/mA
IL = 0.1mA to IOUTMAX (Note 3)
VIN-VOUT
Dropout Voltage
20
60
200
350
30
160
480
800
mV
IL =100µA
IL =100mA
IL =300mA
IL =500mA (Note 4)
IDD
Supply Current (Active Mode)
80
130
µASHDN =VIH,IL =0
ISHDN
Supply Current (Shutdown Mode)
5
µASHDN =0V
TWK
Wake-up Time
(from Shutdown Mode)
—5
10
µsec
VIN =3.5V, VOUT =2.5V
CIN =COUT =1µF
IL = 250mA (See Figure 3-2)
TS
Settling Time
(from Shutdown Mode)
—15
µsec
VIN =3.5V, VOUT =2.5V
CIN =COUT =1µF
IL = 250mA (See Figure 3-2)
PSRR
Power Supply Rejection Ratio
64
dB
FRE ≤ 1kHz
IOUTSC
Output Short Circuit Current
1200
1400
mA
VOUT =0V
∆VOUT/∆PD
Thermal Regulation
0.04
V/W
Note 5
eN
Output Noise
260
nV/
√Hz IL =IOUT
MAX
SHDN Input
VIH
SHDN Input High Threshold
45
——
%VIN
VIL
SHDN Input Low Threshold
15
%VIN
Note 1:
VR is the regulator output voltage setting.
2:
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from
0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation
specification.
4:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V
differential.
5:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA,TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
7:
Hysteresis voltage is referenced to VR.
8:
The minimum VIN has to justify the conditions: VIN ≥ VR +VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to IOUTMAX.
TC VOUT =(VOUTMAX –VOUTMIN)x 10
6
VOUT x ∆T



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