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BCR5AS датащи(PDF) 3 Page - Mitsubishi Electric Semiconductor

номер детали BCR5AS
подробное описание детали  MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
PDF  5 Pages
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производитель  MITSUBISHI [Mitsubishi Electric Semiconductor]
домашняя страница  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

BCR5AS датащи(HTML) 3 Page - Mitsubishi Electric Semiconductor

  BCR5AS Datasheet HTML 1Page - Mitsubishi Electric Semiconductor BCR5AS Datasheet HTML 2Page - Mitsubishi Electric Semiconductor BCR5AS Datasheet HTML 3Page - Mitsubishi Electric Semiconductor BCR5AS Datasheet HTML 4Page - Mitsubishi Electric Semiconductor BCR5AS Datasheet HTML 5Page - Mitsubishi Electric Semiconductor  
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Feb.1999
23
10–1
57 100 23 5 7 101 23 5 7 102
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
100
23
101
57 102 23 5 7 103 23 5 7 104
102
7
5
3
2
101
7
5
3
2
7
5
3
2
10–1
VGD = 0.2V
PGM = 3W
VGM = 10V
VGT = 1.5V
IGM = 2A
PGM =
0.3W
IFGT I
IRGT I
IRGT III
MAXIMUM ON-STATE POWER
DISSIPATION
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
TYPICAL EXAMPLE
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
IFGT I
IRGT I
IRGT III
TYPICAL EXAMPLE
8
6
5
3
1
0
8
0
1
357
2
4
7
24
6
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
0
8
0
1
357
40
80
140
24
6
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
GATE CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE



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