Drain-Source Breakdown Voltage

VGS = 0

ID = 0.25 mA

55

-

-

V

Drain-Source Leakage Current

VDS = 55V

VGS = 0V

-

-

25

µA

Gate-Source Leakage Current

VGS = ±20V

VDS = 0

-

-

±100

nA

Gate-Source Threshold Voltage

VDS = VGS

ID = 250 µA

2

-

4

V

Drain-Source on Resistance

2

VGS = 10V

ID = 25A

-

0.033

0.040

Drain-Source on Resistance

3

VGS = 10V

ID = 25A

-

-

0.022

Forward Transconductance

1

VDS = 25V

ID = 25A

17

-

-

S

Total Gate Charge

1

ID = 25A

-

-

65

nC

Gate-Source Charge

1

VDS = 28V

-

-

12

nC

Gate-Drain Charge

1

VGS = 10V

-

-

27

nC

Turn-On Delay Time

1

VDD = 28V

-

7.3

-

nS

Rise Time

1

ID = 25A

-

69

-

nS

Turn-Off Delay Time

1

RG = 12

-

47

-

nS

Fall Time

1

RD = 1.1

-

60

-

nS

Input Capacitance

1

VGS = 0V

-

1300

-

pF

Output Capacitance

1

VDS = 25V

-

410

-

pF

Reverse Transfer Capacitance

1

f = 1 MHz

-

150

-

pF

BODY DIODE

Forward on Voltage

1

IS = 25A

VGS = 0V

-

1.3

1.75

V

Reverse Recovery Time

1

IS = 25A

di/dt = 100A/µS

-

65

98

nS

Reverse Recovery Charge

1

IS = 25A

di/dt = 100A/µS

-

160

240

µC

Junction Temperature. . . ..... .. .+175°C MAX

Case Operating Temperature Range . .-55°C TO 125°C

(10 Seconds) . . . . . . ..... .. .. .300°C MAX

Drain to Source Voltage . . .55V MAX

Drain to Gate Voltage

Gate to Source Voltage

(Continuous)........ ±20V MAX

Continuous Current ..... 25A MAX

Pulsed Current .......

49A MAX

Thermal Resistance

(Junction to Case)...... 0.3°C/W

ABSOLUTE MAXIMUM RATINGS

Rev. B 7/00

2

NOTES:

1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of

actual

device performance but are for reference only.

2 Resistance as seen at package pins.

3 Resistance for die only; use for thermal calculations.

ELECTRICAL SPECIFICATIONS

Units

Min.

Typ.

Max.

MSK 3013

Test Conditions 4

Parameter

Ω

Ω

Ω