IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

35

55

S

C

iss

4800

pF

C

oss

V

GS

= 0 V, V

1675

pF

C

rss

590

pF

t

d(on)

50

ns

t

r

V

GS

= 10 V, V

V

ns

t

d(off)

I

I

95

ns

t

f

31

ns

Q

g(on)

180

nC

Q

gs

V

GS

= 10 V, V

V

42

nC

Q

gd

Notes 2

75

nC

R

thJC

0.54

K/W

R

thCK

0.3

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

80

A

I

SM

Repetitive; pulse width limited by T

JM

320

A

V

SD

I

1.5

V

Note 1

t

rr

200

ns

Q

RM

0.5

µC

I

RM

6A

I

-di/dt = 100 A/

µs,

V

Note: All terminals are solder plated.

1 - Gate

2 - Drain

3 - Source

ISOPLUS220 OUTLINE

Note: 1. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

2. I

IXFC 80N10