D3V3H1B2LP

Document number: DS38963 Rev. 1 - 2

2 of 5

www.diodes.com

January 2017

© Diodes Incorporated

D3V3H1B2LP

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

380

W

8/20µs, Figure 3

Peak Pulse Current

40

A

8/20µs, Figure 3

ESD Protection

– Contact Discharge

±30

kV

IEC 61000-4-2 Standard

ESD Protection

– Air Discharge

±30

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

C/W

Operating and Storage Temperature Range

-65 to +150

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

—

—

3.3

V

—

Channel Leakage Current (Note 6)

—

10

500

nA

Clamping Voltage, IEC 61000-4-5

—



—

7.0

V

—

—

9.5

Breakdown Voltage

3.8

—

6.5

V

Channel Input Capacitance

—

100

—

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout, which can be found on our website

at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0

125

175

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

A

°

25

100

50

75

150

25

75

125

250

175

Note 5

200

225

0

50

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

Figure 2 Pulse Derating Curve

A

0

100

25

75

175 200