DLA20IM800PC

V

=

V

A²s

A²s

A²s

A²s

Symbol

Definition

Ratings

typ.

max.

I

R

V

I

A

V

F

1.27

R

1

K/W

R

min.

20

V

5

T

= 25°C

VJ

T

=

°C

VJ

mA

0.05

V

=

V

R

T

= 25°C

VJ

I =

A

F

V

T =

°C

C

140

P

tot

150

W

T

= 25°C

C

R

K/W

20

800

max. non-repetitive reverse blocking voltage

reverse current

forward voltage drop

total power dissipation

Conditions

Unit

1.49

T

= 25°C

VJ

150

V

F0

V

0.86

T

=

°C

VJ

175

19

mΩ

V

1.24

T

=

°C

VJ

I =

A

F

V

20

1.59

I =

A

F

40

I =

A

F

40

threshold voltage

slope resistance

for power loss calculation only

µA

150

V

800

max. repetitive reverse blocking voltage

T

= 25°C

VJ

4

junction capacitance

V =

V;

400

T

= 25°C

f = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine

T

= 45°C

VJ

max. forward surge current

T

=

°C

VJ

150

I²t

T

= 45°C

value for fusing

T

=

°C

150

V

= 0 V

R

V

= 0 V

R

V

= 0 V

V

= 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

T

=

°C

VJ

175

200

215

145

140

A

A

A

A

170

185

200

190

800

FAV

d =

rectangular

0.5

average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Rectifier

900

0.25

IXYS reserves the right to change limits, conditions and dimensions.

20121026a

Data according to IEC 60747and per semiconductor unless otherwise specified

© 2012 IXYS all rights reserved