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MDF12N50FTH датащи(PDF) 1 Page - MagnaChip Semiconductor.

номер детали MDF12N50FTH
подробное описание детали  N-Channel MOSFET 500V, 11.5A, 0.75ohm
PDF  8 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDF12N50FTH датащи(HTML) 1 Page - MagnaChip Semiconductor.

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Jun 2018. Version 1.1
MagnaChip Semiconductor Ltd.
1
`
Absolute Maximum Ratings (Ta = 25
oC)
Characteristics
Symbol
MDP12N50
MDF12N50
Unit
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
TC=25
oC
ID
.11.5
11.5*
A
TC=100
oC
7.0
7.0*
A
Pulsed Drain Current
(1)
IDM
46
46*
A
Power Dissipation
TC=25
oC
PD
165
42
W
W/
oC
Derate above 25
oC
1.33
0.32
Repetitive Avalanche Energy
(1)
EAR
16.5
mJ
Peak Diode Recovery dv/dt
(3)
dv/dt
4.5
V/ns
Single Pulse Avalanche Energy
(4)
EAS
460
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
* Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Symbol
MDP12N50
MDF12N50
Unit
Thermal Resistance, Junction-to-Ambient
(1)
RθJA
62.5
62.5
oC/W
Thermal Resistance, Junction-to-Case
(1)
RθJC
0.75
3.0
MDP12N50F/MDF12N50F
N-Channel MOSFET 500V, 11.5A, 0.75Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaCh
ip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 500V
ID = 11.5A
@ VGS = 10V
RDS(ON) ≤
0.75
Ω
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
G
S
TO-220F
MDF Series
TO-220
MDP Series


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Аналогичное описание - MDF12N50FTH

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