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MDF5N50FTH датащи(PDF) 1 Page - MagnaChip Semiconductor.

номер детали MDF5N50FTH
подробное описание детали  N-Channel MOSFET 500V, 4.5 A, 1.58ohm
PDF  8 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDF5N50FTH датащи(HTML) 1 Page - MagnaChip Semiconductor.

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Jun. 2018 Version 1.3
MagnaChip Semiconductor Ltd.
1
Absolute Maximum Ratings (Ta = 25
oC)
Characteristics
Symbol
MDP5N50F
MDF5N50F
Unit
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
TC=25
oC
ID
4.5
4.5*
A
TC=100
oC
2.8
2.8*
A
Pulsed Drain Current
(1)
IDM
18
18*
A
Power Dissipation
TC=25
oC
PD
93
27
W
W/
oC
Derate above 25
oC
0.74
0.22
Repetitive Avalanche Energy
(1)
EAR
93
mJ
Peak Diode Recovery dv/dt
(3)
dv/dt
4.5
V/ns
Single Pulse Avalanche Energy
(4)
EAS
230
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
* Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Symbol
MDP5N50F
MDF5N50F
Unit
Thermal Resistance, Junction-to-Ambient
(1)
RθJA
62.5
62.5
oC/W
Thermal Resistance, Junction-to-Case
(1)
RθJC
1.35
4.6
MDP5N50F / MDF5N50F
N-Channel MOSFET 500V, 4.5 A, 1.58Ω
General Description
The MDP5N50F/MDF5N50F use advanced Magnachip
’s
MOSFET Technology, which provides low on-state resistance,
high switching performance and excellent quality.
MDP5N50F/MDF5N50F are suitable device for SMPS, HID
and general purpose applications.
Features
 VDS = 500V
 ID = 4.5A
@VGS = 10V
 RDS(ON) ≤ 1.58Ω
@VGS = 10V
Applications
 Power Supply
 PFC
 Ballast
D
G
S
TO-220F
MDF Series
TO-220
MDP Series


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