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MDF5N50F датащи(PDF) 4 Page - MagnaChip Semiconductor.

номер детали MDF5N50F
подробное описание детали  N-Channel MOSFET 500V, 4.5 A, 1.58ohm
PDF  8 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDF5N50F датащи(HTML) 4 Page - MagnaChip Semiconductor.

  MDF5N50F Datasheet HTML 1Page - MagnaChip Semiconductor. MDF5N50F Datasheet HTML 2Page - MagnaChip Semiconductor. MDF5N50F Datasheet HTML 3Page - MagnaChip Semiconductor. MDF5N50F Datasheet HTML 4Page - MagnaChip Semiconductor. MDF5N50F Datasheet HTML 5Page - MagnaChip Semiconductor. MDF5N50F Datasheet HTML 6Page - MagnaChip Semiconductor. MDF5N50F Datasheet HTML 7Page - MagnaChip Semiconductor. MDF5N50F Datasheet HTML 8Page - MagnaChip Semiconductor.  
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Jun. 2018 Version 1.3
MagnaChip Semiconductor Ltd.
4
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
MDP5N50F (TO-220)
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve
MDP5N50F (TO-220)
Fig.12 Single Pulse Maximum Power
Dissipation
– MDP5N50F (TO-220)
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
100 s
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
Single Pulse
T
J=Max rated
T
C=25
℃
V
DS, Drain-Source Voltage [V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
※ Notes :
Duty Factor, D=t
1/t2
PEAK T
J = PDM * Z
θ JC* Rθ JC(t) + TC
R
Θ JC=1.35℃/W
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1, Rectangular Pulse Duration [sec]
1E-5
1E-4
1E-3
0.01
0.1
1
10
0
2000
4000
6000
8000
10000
single Pulse
R
thJC = 1.35
℃/W
T
C = 25
℃
Pulse Width (s)
1
10
0
200
400
600
800
1000
1200
1400
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
※ Notes ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
0
2
4
6
8
10
12
14
0
2
4
6
8
10
400V
250V
100V
※ Note : I
D = 4.5A
Q
G, Total Gate Charge [nC]
25
50
75
100
125
150
0
2
4
6
T
C, Case Temperature [
℃]



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