 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
MMF80R450PBTH датащи(PDF) 2 Page - MagnaChip Semiconductor. |
|
|
|||||||||||||||||||||||||||||
MMF80R450PBTH датащи(HTML) 2 Page - MagnaChip Semiconductor. |
|
|
2 / 10 page  MMF80R450PB Datasheet Nov. 2017 Revision 1.0 MagnaChip Semiconductor Ltd. 2 Parameter Symbol Rating Unit Note Drain – Source voltage VDSS 800 V Gate – Source voltage VGSS ±30 V Continuous drain current (1) ID 11 A TC = 25 oC 7.0 A TC = 100 oC Pulsed drain current (2) IDM 33 A Power dissipation PD 33.6 W Single - pulse avalanche energy EAS 470 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness (3) dv/dt 15 V/ns Storage temperature Tstg -55 ~150 oC Maximum operating junction temperature Tj 150 oC 1) ID limited by maximum junction temperature. 2) Pulse width tP limited by Tj,max 3) ISD ≤ ID, VDS peak ≤ V(BR)DSS Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 3.72 oC/W Thermal resistance, junction-ambient max Rthja 62.5 oC/W Thermal Characteristics Absolute Maximum Rating (T c=25 oC unless otherwise specified) |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
