CS19-08HO1 datasheet(5/5 Pages) IXYS

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CS19-08ho1

0,01

0,1

100

120

140

160

0,5

1,0

1,5

2,0

2,5

100

101

102

103

104

0,0

0,2

0,4

0,6

0,8

TSM

[A]

T [V]

t [ms]

thJC

[K/W]

4 5 6 7 8 9 0

100

1000

2s]

t [ms]

T(AV)M

[A]

C [°C]

75 100 125 150 175

Fig. 1 Forward characteristics

Fig. 3 I

2t versus time (1-10 ms)

t [s]

Fig. 6 Max. forward current

at case temperature

Fig. 2 Surge overload current

Fig. 8 Transient thermal impedance junction to case

VJ = 25°C

VJ = 125°C

VJ = 45°C

50 Hz, 80% V

RRM

VJ = 125°C

VJ = 45°C

R = 0 V

125°C

150°C

T(AV) [A]

(AV)

[W]

Fig. 7a Power dissipation versus direct output current

Fig. 7b and ambient temperature

100

150

amb [°C]

dc =

0.5

0.4

0.33

0.17

0.08

100

1000

100

1000

100

1000

0,1

100

G [mA]

[V]

[µs]

G [mA]

typ.

Limit

VJ = 125°C

Fig. 4 Gate trigger characteristics

Fig. 5 Gate controlled delay time

1: I

GD, TVJ = 150°C

2: IGT, TVJ = 25°C

3: IGT, TVJ = -40°C

dc =

0.5

0.4

0.33

0.17

0.08

thHA

0.6

0.8

1.0

2.0

4.0

8.0

GD, TVJ = 125°C

4: P

GAV = 0.5 W

5: PGM = 2.5 W

6: PGM =

5 W

thi [K/W]

i [s]

0.10

0.01

0.08

0.0011

0.18

0.025

0.17

0.32

0.17

0.09

Thyristor

IXYS reserves the right to change limits, conditions and dimensions.

20150827c

Data according to IEC 60747and per semiconductor unless otherwise specified

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