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MPMD100B120RH датащи(PDF) 2 Page - MagnaChip Semiconductor.

номер детали MPMD100B120RH
подробное описание детали  NPT & Rugged Type 1200V IGBT Module
PDF  7 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MPMD100B120RH датащи(HTML) 2 Page - MagnaChip Semiconductor.

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March 2013.Version 2.0
MagnaChip Semiconductor Ltd.
2
Electrical Characteristics of IGBT @T
C =25
oC(unless otherwise specified)
Characteristics
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
Collector-Emitter Breakdown Voltage
BVCES
IC = 1mA, VGE = 0V
1200
-
-
V
Gate Threshold Voltage
VGE(th)
VCE = VGE, IC = 2mA
4.5
-
7.5
Collector Cut-Off Current
ICES
VCE = 1200V, VGE = 0V
-
-
1
mA
Gate Leakage Current
IGES
VGE = ±20V, VCE = 0V
-
-
±250
nA
Collector-Emitter saturation voltage
VCE(sat)
VGE = 15V,
IC=100A
TC=25℃
-
2.7
3.2
V
TC=100℃
-
3.3
-
V
Dynamic Characteristics
Total Gate Charge
Qg
VCC = 600V, IC = 100A,
VGE = ±15V
-
400
-
nC
Gate-Emitter Charge
Qge
-
44
-
Gate-Collector Charge
Qgc
-
236
-
Input Capacitance
Cies
VCE = 30V, VGE = 0V,
f = 1.0MHz
-
4760
-
pF
Output Capacitance
Coes
-
518
-
Reverse Transfer Capacitance
Cres
-
175
--
Turn-On Delay Time
td(on)
VCC = 600V, IC =100A,
VGE =±15V,
RG = 10Ω, Inductive Load
-
135
-
ns
Rise Time
tr
-
60
-
Turn-Off Delay Time
td(off)
-
450
-
Fall Time
tf
-
70
-
Turn on Switching
Loss
Eon
-
6.7
-
mJ
Turn off Switching
Loss
Eoff
-
6.0
-
mJ
Total Switching
Loss
Ets
-
12.7
-
mJ
Short Circuit Withstand Time
Tsc
Vcc = 600V, VGE = ±15V
RG = 10 Ω @ Tc = 100℃
10
-
-
us
Electrical Characteristics of FRD @Ta =25oC(unless otherwise specified)
Diode Forward Voltage
VFM
IF=100A
TC=25℃
-
2.9
3.5
V
TC=100℃
-
2.3
-
Diode Reverse Recovery Time
trr
IF =100A,
VR=600V,
di/dt = -200A/us
TC=25℃
-
100
-
ns
TC=100℃
220
Diode Peak Reverse
Recovery Current
Irr
TC=25℃
-
5
-
A
TC=100℃
-
15
-
Diode Reverse
Recovery Charge
Qrr
TC=25℃
-
250
-
nC
TC=100℃
-
1650
-



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