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IP4309CX9 датащи(PDF) 4 Page - NXP Semiconductors

номер детали IP4309CX9
подробное описание детали  HDMI octal channel low capacitive high-performance ESD protection
PDF  14 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

IP4309CX9 датащи(HTML) 4 Page - NXP Semiconductors

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IP4309CX9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 10 March 2011
4 of 14
NXP Semiconductors
IP4309CX9
HDMI octal channel low capacitive high-performance ESD protection
5.
Limiting values
[1]
All pins to ground.
[2]
IP4309CX9 is qualified to 1000 contact discharges of
15 kV using the IEC 61000-4-2 model, far exceeding
the specified IEC 61000-4-2, level 4 (8 kV contact discharge).
6.
Characteristics
[1]
Guaranteed by design.
[2]
Pins A1, A2, A3, B1, B3, C1 and C2 to ground.
[3]
According to IEC 61000-4-5 and IEC 61000-4-9.
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VI
input voltage
at I/O pins
0.5
+5.5
V
VESD
electrostatic discharge
voltage
[1]
contact discharge
[2] -
15
kV
air discharge
[2] -
15
kV
IEC 61000-4-2, level 4
contact discharge
-
8kV
air discharge
-
15
kV
Tstg
storage temperature
55
+150
C
Treflow(peak)
peak reflow temperature
tp  10 s
-
260
C
Tamb
ambient temperature
30
+85
C
Table 4.
Characteristics
Tamb =25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
C(I/O-GND)
input/output to
ground capacitance
VI =0.5 V; f=1MHz
[1][2] 1.0
1.3
1.5
pF
ILR
reverse leakage current VI =3V
[2] --50
nA
VBRzd
Zener diode
breakdown voltage
Itest =1mA
6
-
11
V
VF
forward voltage
-
0.7
-
V
Rdyn
dynamic resistance
I = 1 A
[3]
positive transient
-
0.45
-
negative transient
-
0.5
-



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