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DGS 20-018AS

0.0

0.5

1.0

1.5

2.0

0.01

0.1

1

10

0.00001

0.0001

0.001

0.01

0.1

1

10

0.01

0.1

1

10

t

s

K/W

0.1

1

10

100

1000

10

100

C

J

I

F

A

V

F

V

R

V

pF

V

Z

thJC

T

125°C

25°C

DGS10-015/018BS

T

400

30

Single Pulse

Fig. 1 typ. forward characteristics

Fig. 2 typ. junction capacity

versus blocking voltage

Fig. 3 typ. thermal impedance junction to case

Note:

explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide

Schottky diodes:

conduction

forward characteristics

turn off characteristics

turn on characteristics

by majority + minority carriers

V

extraction of excess carriers

causes temperature dependant

reverse recovery (t

delayed saturation leads to V

FR

Rectifier Diode

by majority carriers only

V

reverse current charges

junction capacity C

not temperature dependant

no turn on overvoltage peak

GaAs Schottky Diode

Outline TO-263 AB

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

A1

2.03

2.79

.080

.110

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.46

0.74

.018

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

8.00

8.89

.315

.350

E

9.65

10.29

.380

.405

E1

6.22

8.13

.245

.320

e

2.54 BSC

.100 BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.20

0

.008

R

0.46

0.74

.018

.029