A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

100

µµµµA

100

µµµµA

50

115

250

---

f = 1.0 GHz

8.5

GHz

f = 1.0 MHz

0.2

0.6

pF

||||S21E||||

2

f = 1.0 GHz

f = 2.0 GHz

f = 4.0 GHz

10.0

18.0

11.0

6.5

dB

f = 2.0 GHz

11.0

dB

f = 2.0 GHz

f = 4.0 GHz

15.0

10.0

dB

NF

f = 2.0 GHz

2.0

2.5

dB

NPN SILICON RF TRANSISTOR

2SC2585

DESCRIPTION:

The

Device Designed for Low Niose

Amplifier and Medium Power Oscillator

Applications up to 8.5 GHz.

MAXIMUM RATINGS

65 mA

12 V

25 V

1.5 V

-65

-65

θθθθ

JC

85

PACKAGE STYLE

DIMENSIONS IN MILLIMETERS

1 = BASE

3 = COLLECTOR

2 & 4 = EMITTER