1

Publication date: March 2003

SJH00082AED

Transistors with built-in Resistor

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

50

V

Collector-emitter voltage (Base open)

50

V

Collector current

80

mA

Total power dissipation

100

mW

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

UNRF2AN

Silicon NPN epitaxial planar transistor

For digital circuits

■ Features

• Suitable for high-density mounting and downsizing of the equip-

ment for Ultraminiature leadless package

0.6 mm

× 1.0 mm (height 0.39 mm)

■ Absolute Maximum Ratings T

a

= 25°C

1: Base

2: Emitter

3: Collector

ML3-N2 Package

Unit: mm

Internal Connection

Marking Symbol: 2C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

Collector-emitter voltage (Base open)

= 2 mA, I

B

= 050

V

Collector-base cutoff current (Emitter open)

0.1

µA

Collector-emitter cutoff current (Base open)

0.5

µA

Emitter-base cutoff current (Collector open)

= 6 V, I

C

= 0

0.2

mA

Forward current transfer ratio

80

400



Collector-emitter saturation voltage

0.25

V

Output voltage high level

= 5 V, V

B

= 0.5 V, R

L

= 1 kΩ

4.9

V

Output voltage low level

0.2

V

Input resistance

−30%

4.7

+30%

k

Ω

Resistance ratio

0.1



Transition frequency

150

MHz

■ Electrical Characteristics T

2

1

3

0.39

+0.01

−0.03

2

1

3

B

(47 k

Ω)

C

E

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.