AFT09S200W02N datasheet(3/19 Pages) NXP

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AFT09S200W02NR3 AFT09S200W02GNR3

RF Device Data

Freescale Semiconductor, Inc.

Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (1,2) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1400 mA, Pout = 56 W Avg., f = 960 MHz,

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ 5MHz Offset.

Power Gain

Gps

18.5

19.2

21.5

Drain Efficiency

D

32.5

36.5

—

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

PAR

6.5

6.8

—

Adjacent Channel Power Ratio

ACPR

—

--34.8

--33.5

dBc

Input Return Loss

IRL

—

--13

--9

Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1400 mA, f = 940 MHz

VSWR 10:1 at 32 Vdc, 260 W CW Output Power

(3 dB Input Overdrive from 180 W CW Rated Power)

No Device Degradation

Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1400 mA, 920–960 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

—

200

—

AM/PM

(Maximum value measured at the P3dB compression point across

the 920--960 MHz frequency range)



—

--11.5

—



VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

140

—

MHz

Gain Flatness in 40 MHz Bandwidth @ Pout =56 W Avg.

—

0.1

—

Gain Variation over Temperature

(--30Cto+85C)

G

—

0.018

—

dB/C

Output Power Variation over Temperature

(--30Cto+85C)

P1dB

—

0.004

—

dB/C

1. Part internally matched both on input and output.

2. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull

wing (GN) parts.

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