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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AFT09MP055N датащи(PDF) 3 Page - NXP Semiconductors |
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AFT09MP055N датащи(HTML) 3 Page - NXP Semiconductors |
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3 / 21 page  AFT09MP055NR1 AFT09MP055GNR1 3 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 12.5 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc) Crss — 1.9 — pF Output Capacitance (VDS = 12.5 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc) Coss — 61 — pF Input Capacitance (VDS = 12.5 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss (2) — 690 — pF Functional Tests (3) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 12.5 Vdc, IDQ(A+B) = 550 mA, Pin = 1 W,f= 870 MHz Common--Source Amplifier Output Power Pout — 57 — W Drain Efficiency ηD — 69.0 — % 1. Each side of device measured separately. 2. Value includes input matching network. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. |
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