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AFT05MS004N датащи(PDF) 7 Page - NXP Semiconductors |
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AFT05MS004N датащи(HTML) 7 Page - NXP Semiconductors |
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7 / 23 page ![]() AFT05MS004NT1 7 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND REFERENCE CIRCUIT 0 12 3 2 1 3 4 1.5 2.5 3.5 6 VDD =7.5 Vdc,f=520 MHz Pin =0.04 W VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 6. Output Power versus Gate--Source Voltage Figure 7. Power Gain, Drain Efficiency and Output Power versus Input Power Pin, INPUT POWER (WATTS) 0 6 3 0 D Gps 30 50 40 10 20 15 12 9 18 60 70 80 0.02 Pout VDD =7.5 Vdc, IDQ = 100 mA f = 520 MHz Pin =0.02 W 5 21 24 0.04 0.06 0.08 0.1 90 VDD =7.5 Vdc, IDQ = 100 mA, Pout =4 W f MHz Zsource Zload 520 1.35 + j2.15 2.10 + j1.70 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Figure 8. Narrowband Series Equivalent Source and Load Impedance — 520 MHz Input Matching Network Device Under Test Output Matching Network Zsource Zload 50 50 |
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