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TLGE174P датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали TLGE174P
подробное описание детали  TOSHIBA LED Lamp InGaAP Green Light Emission
PDF  4 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLGE174P датащи(HTML) 2 Page - Toshiba Semiconductor

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TLGE174P
2002-09-25
2
Electrical And Optical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 20mA
―
2.27
2.8
V
Reverse current
IR
VR = 4V
―
―
50
µA
Luminous intensity
IV
IF = 20mA
(Note)
476
1400
―
mcd
Peak emission wavelength
λp
IF = 20mA
―
574
―
nm
Spectral line half width
∆λ
IF = 20mA
―
11
―
nm
Dominant wavelength
λd
IF = 20mA
―
571
―
nm
(Note): Lamps are classified into the following ranks according to their luminous intensity.
Measurement tolerance for each limit is ±15%.
R: 560
-1120mcd, S: 1000-2000mcd, T: 1800-3600mcd
Precaution
Please be careful of the followings
· Soldering temperature: 260°C max
Soldering time: 3 s max
(Soldering portion of lead: Up to 2mm from the body of the device)
· If the lead is formed, the lead should be formed up to 5mm from the body of the device without forming stress to
the resin. Soldering should be performed after lead forming.
· This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure
that it will not be affected by this IR light.



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