T..RIA Series

3

Bulletin I27105 rev. B 02/02

www.irf.com

T

J

Max. junction operating

-40 to 125

°C

temperature range

T

stg

Max. storage temperature

-40 to 150

°C

range

0.65

0.50

0.38

K/W

DC operation, per junction

junction to case

0.2

K/W

Mounting surface smooth, flat and greased

case to heatsink

T

Mounting

to heatsink

1.3 ± 10%

Nm

M3.5 mounting screws (2)

torque ± 10%

terminals

3 ± 10%

M5 screw terminals

wt

Approximate weight

54

g

See outline table

Case style

D-56

T type

I

RRM

Maximum peak reverse and

15

mA

T

V

INS

RMS isolation voltage

3500

V

50Hz, circuit to base, all terminals shorted,

T

dv/

dt

Critical rate of rise of off-state

500

V/µs

voltage

Blocking

Thermal and Mechanical Specifications

(2) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the

spread of the compound.

Parameter

T50RIA

T70RIA

T90RIA

Units Conditions

Parameter

T50RIA

T70RIA

T90RIA

Units Conditions

Triggering

P

GM

Max. peak gate power

10

12

12

W

tp

≤5ms, T

P

2.5

3.0

3.0

W

f=50Hz, T

I

GM

Max. peak gate current

2.5

3.0

3.0

A

tp

≤5ms, T

-V

GT

Max. peak negative

10

10

10

V

gate voltage

V

GT

Max. required DC gate

4.0

4.0

4.0

V

Anodesupply=6V,resistive

voltage to trigger

2.5

2.5

2.5

load;Ra=1

Ω

1.5

1.5

1.5

I

GT

Max. required DC gate

250

270

270

Anodesupply=6V,resistive

current to trigger

100

120

120

mA

load;Ra=1

Ω

50

60

60

V

GD

Max. gate voltage

0.2

0.2

0.2

V

@ T

that will not trigger

I

GD

Max. gate current

5.0

6.0

6.0

mA

that will not trigger

di/

dt

Max. rate of rise of

200

A/µs

V

turned-on current

180

I

160

T70RIA & T90RIA; tr < 0.5µs, tp >= 6µs

150

For repetitive value use 40% non-repetitive

Per JEDEC std. RS397,5.2.2.6

Parameter

T50RIA

T70RIA

T90RIA

Units Conditions

non lubricated

threads

(1) Available with dv/dt = 1000V/

µs, to complete code add S90 i.e. T90RIA80S90