T..RIA Series

6

Bulletin I27105 rev. B 02/02

www.irf.com

Fig. 9 - Gate Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 6 - Maximum Non-Repetitive Surge Current

500

600

700

800

900

1000

1100

1200

110

100

Number Of E qual Amplitude H alf Cycle Current P uls es (N)

T50R I A.. S eries

Initial T

= 125 C

@ 60 H z 0.0083 s

@ 50 H z 0.0100 s

At Any R ated L oad Condition And W ith

R ated V

Applied F ollowing S urge.

RRM

J

500

600

700

800

900

1000

1100

1200

1300

0.01

0.1

1

Puls e T rain Duration (s )

Maximum Non R epetitive S urge Current

Vers us P uls e T rain Duration. Control

Of Conduction May Not B e Maintained.

Initial T = 125 C

No Voltage R eapplied

R ated V

R eapplied

RR M

J

T 50R IA.. S eries

Fig. 10 - On-state Voltage Drop Characteristics

1

10

100

1000

0.5

1

1.5

2

2.5

3

3.5

4

4.5

T = 25 C

J

Ins tantaneous On-s tate Voltage (V)

T 50R IA.. S eries

T = 125 C

J

0.1

1

10

100

0.00 1

0.0 1

0.1

1

10

100

1000

VGD

IGD

(b)

(a)

(1) (2)

Ins tantaneous Gate Current (A)

a) R ecommended load line for

b) R ecommended load line for

R ectangular gate puls e

(1) P GM = 10W, tp = 5 ms

(2) P GM = 20W, tp = 2 ms

(3) P GM = 50W, tp = 1 ms

(4) P GM = 100W, tp = 500 s

<=30% rated di/dt : 20V, 65ohms

tr=1 s , tp>=6 s

T 50 R IA.. S eries

F requency L imited by P G(AV)

r ated di/dt : 20V, 30ohms ;

tr=0.5 s , tp>=6 s

(3) (4)