T..RIA Series

8

Bulletin I27105 rev. B 02/02

www.irf.com

Fig. 19 - Gate Characteristics

Fig. 16 - Maximum Non-Repetitive Surge Current

Fig. 17 - Maximum Non-Repetitive Surge Current

Fig. 10 - On-state Voltage Drop Characteristics

700

800

900

1000

1100

1200

1300

1400

1500

110

100

Number Of E qual Amplitude H alf Cycle Current P uls es (N)

T 70R IA.. S eries

At Any R ated L oad Condition And W ith

R ated V

Applied F ollowing S urge.

Initial T

= 125 C

@ 6 0 H z 0.0083 s

@ 5 0 H z 0.0100 s

J

RR M

600

700

800

900

100 0

110 0

120 0

130 0

140 0

150 0

160 0

170 0

0.01

0.1

1

Puls e T rain Duration (s )

Maximum Non R epetitive S urge Current

Vers us P uls e T rain Duration. Control

Of Conduction May Not B e Maintained.

Initial T = 125 C

No Voltage R eapplied

R ated V

R eapplied

RRM

J

T 70R IA.. S eries

1

10

100

1000

0

0.5

1

1.5

2

2.5

3

3.5

4

T = 25 C

J

Ins tantaneous On-s tate Voltage (V)

T70R IA.. S eries

T = 125 C

J

0.1

1

10

100

0.0 01

0.01

0.1

1

10

100

1000

VGD

IGD

(b)

(a)

(1)

(2)

Instantaneous Gate Current (A)

a) R ecommended load line for

b) R ecommended load line for

R ectangular gate puls e

T 70R IA.., T 90R IA.. S eries

F requency L imited by P G(AV)

tr=1 s , tp>=6 s

rated di/dt : 20V, 20ohms ;

tr=0.5 s , tp>=6 s

<=30 % rated di/dt : 15V, 40ohms

(1) P GM = 12W, tp = 5ms

(2) P GM = 30W, tp = 2ms

(3) P GM = 60W, tp = 1ms

(4) P GM = 200W, tp = 300 s

(3)

(4)