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PCFMB200W12 датащи(PDF) 4 Page - Kyocera Kinseki Corpotation

номер детали PCFMB200W12
подробное описание детали  IGBT Module
PDF  4 Pages
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производитель  KSS [Kyocera Kinseki Corpotation]
домашняя страница  http://www.kinseki.co.jp/eng
Logo KSS - Kyocera Kinseki Corpotation

PCFMB200W12 датащи(HTML) 4 Page - Kyocera Kinseki Corpotation

  PCFMB200W12 Datasheet HTML 1Page - Kyocera Kinseki Corpotation PCFMB200W12 Datasheet HTML 2Page - Kyocera Kinseki Corpotation PCFMB200W12 Datasheet HTML 3Page - Kyocera Kinseki Corpotation PCFMB200W12 Datasheet HTML 4Page - Kyocera Kinseki Corpotation  
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Module
0
20
40
60
80
100
120
140
160
180
200
0
10
20
30
40
Collector Current IC (A)
Fig.7- Collector Current vs. Switching Loss
EOFF
EON
VCC=600V
RG=3.6
VGE=±15V
Tj=125°C
Tj=150°C
Inductive Load
ERR
3
10
30
100
0.3
1
3
10
30
100
300
1000
Series Gate Impedance RG (
)
Fig.8- Series Gate Impedance vs. Switching Loss
EOFF
EON
VCC=600V
IC=200A
VGE=±15V
Tj=125°C
Tj=150°C
Inductive Load
ERR
0
50
100
150
200
30
100
300
1000
Forward Current IF (A)
Fig.10- Reverse Recovery Characteristics
of FWD & Inverse Diode (Typical)
IRrM
trr
VCC=600V, VGE=±15V, RG=3.6
Tj=125°C
Tj=150°C
0
200
400
600
800
1000
1200
1400
1600
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
Collector to Emitter Voltage V CE (V)
Fig.11- Reverse Bias Safe Operating Area
RG=3.6
, VGE=±15V, Tj<150°C (Chip level)
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
1
1x10
-3
3x10
-3
1x10
-2
3x10
-2
1x10
-1
3x10
-1
1
Time t (s)
Fig.12- Transient Thermal Impedance
TC=25°C
1 Shot Pulse
FW D & Inverse Diode
IGBT
0
1
2
3
4
0
50
100
150
200
250
300
350
400
Forward Voltage V F (V)
Fig.9- Forward Characteristics of FWD (Typical)
Tj=25°C
Tj=125°C
Tj=150°C



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