Switching Diodes

1

Publication date: November 2003

SKF00065BED

MAS3132E

Silicon epitaxial planar type

For high-speed switching circuits

■ Features

• Two elements are contained in one package, allowing high-

density mounting

• Short reverse recovery time t

rr

• Small terminal capacitance C

t

■ Absolute Maximum Ratings T

Parameter

Symbol

Rating

Unit

Reverse voltage

80

V

Maximum peak reverse voltage

80

V

Forward current

Single

100

mA

Double

150

Peak forward current

Single

225

mA

Double

340

Non-repetitive peak

Single

500

mA

750

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

1.2

V

Reverse voltage

V

Reverse current

= 75 V

100

nA

Terminal capacitance

2

pF

3

ns

= 0.1 I

= 100 Ω

■ Electrical Characteristics T

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

Wave Form Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

V

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A

Internal Connection

Note) *: t

= 1 s

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.

2. Absolute frequency of input and output is 100 MHz.

1: Anode 1

2: Anode 2

3: Cathode 1, 2

SSSMini3-F1 Package

Unit: mm

Marking Symbol: MU

0.33

(0.40)

(0.40)

12

3

5˚

+0.05

–0.02

0.10

+0.05

–0.02

0.23

+0.05

–0.02

12

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