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LTC1980 датащи(PDF) 13 Page - Linear Technology |
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LTC1980 датащи(HTML) 13 Page - Linear Technology |
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13 / 16 page ![]() LTC1980 13 1980f the transformer which can reduce the leakage inductance, reduce the need for aggressive snubber design and for this reason improve efficiency. Avoid transformer saturation under all operating condi- tions and combinations (usually the biggest problems occur at high output currents and extreme duty cycles. Also check these conditions for battery charging and regulation modes. Finally, in low voltage applications, select a transformer with low winding resistance. This will improve efficiency at heavier loads. Capacitors Check the RMS current rating on your capacitors on both sides of your circuit. Low ESR and ESL is recommended for lowest ripple. OS-CON capacitors (from Sanyo) work very well in this application. Diodes In low voltage applications, Schottky diodes should be placed in parallel with the drain and source of the MOSFETs in the PWM supply. This prevents body diode turn on and improves efficiency by eliminating loss from reverse re- covery in these diodes. It also reduces conduction loss during the RGTDR/BGTDR break interval. The LTC1980 can operate to voltages as low as 2.8V. Suitable Schottky diodes include the ZHCS1000 (VF = 420mV at IF = 1A) and SL22/23 (VF = 440mV at IF = 2A) for most 500mA to 1A output current applications. Vendor List VENDOR COMPONENTS TELEPHONE BH Electronics Transformers 952-894-9590 Coiltronics/Cooper Electronic Transformers 561-752-5000 Fairchild Semiconductor MOSFETs Schottky Rectifiers 800-341-0392 Vishay (General Semiconductor) MOSFETs Schottky Rectifiers 631-847-3000 Sanyo OS-CON Capacitors 408-749-9714 Sumida Electric USA Transformers 847-956-0666 Vishay (Siliconix) MOSFETs 408-988-8000 Current Sense Resistor Voltage drop in the current sense resistor should be limited to approximately ±100mV with respect to ground at max load currents in all modes. This value strikes a reasonable balance between providing an adequate low current signal, while keeping the losses from this resistor low. For applications where the inputs and output voltages may be low, a somewhat lower drop can be used (in order to reduce conduction losses slightly). The LTC1980 has several features, such as leading-edge blanking, which make application of this part easier to use. However for best charge current accuracy, the current sense resistor should be Kelvin sensed. MOSFETs The LTC1980 uses low side MOSFET switches. There are two very important advantages. First, N-channel MOSFETs are used—this generally means that efficiency will be higher than a comparable on-resistance P-channel device (because less gate charge is required). Second, low VT (‘logic-level’) MOSFETs with relatively low absolute maxi- mum VGS ratings can be used, even in higher voltage applications. Refer to Application Note 19 for information on determining MOSFET voltage and current ratings. Transformer Turns ratio affects the duty factor of the power converter which impacts current and voltage stress on the power MOSFETs, input and output capacitor RMS currents and transformer utilization (size vs power). Using a 50% duty factor under nominal operating conditions usually gives reasonable results. For a 50% duty factor, the turns ratio is: N = VREG/VBAT N should be calculated for the design operating as a DC/DC converter and as a battery charger. The final turns ratio should be chosen so that it is approximately equal to the average of the two calculated values for N. In addition choose a turns ratio which can be made from the ratio of small integers. This allows bifilar windings to be used in APPLICATIO S I FOR ATIO |
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