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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LT6210CS6 датащи(PDF) 5 Page - Linear Technology |
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LT6210CS6 датащи(HTML) 5 Page - Linear Technology |
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5 / 16 page  5 LT6210/LT6211 62101f SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS VOS Input Offset Voltage –1 ±4.5 –1.5 ±4.5 mV q ±8 ±8mV IIN+ Noninverting Input Current 0.2 ±1 0.2 ±1 µA q ±2 ±1.5 µA IIN– Inverting Input Current –3 ±8.5 –0.5 ±3 µA q ±11 ±4.5 µA en Input Noise Voltage Density f = 1kHz, RF = 13k, RG = 681Ω, 13.5 13.5 nV/ √Hz RS = 0Ω +in Input Noise Current Density f = 1kHz 0.75 0.75 pA/ √Hz –in Input Noise Current Density f = 1kHz 5 5 pA/ √Hz RIN+ Noninverting Input Resistance VIN = V + – 1.2V to V– + 1.2V (Note 8) q 1 25 1 15 M Ω CIN+ Noninverting Input Capacitance f = 100kHz 2 2 pF VINH Input Voltage Range, High (Note 10) q 3.8 4.1 1.8 2.1 V VINL Input Voltage Range, Low (Note 10) q –4.1 –3.8 0.9 1.2 V VOUTH Output Voltage Swing, High RL = 1k (Note 11) 4.75 4.85 2.75 2.85 V q 4.7 2.7 V VOUTL Output Voltage Swing, Low RL = 1k (Note 11) –4.95 –4.85 0.05 0.15 V q –4.8 0.2 V SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS PSRR Power Supply Rejection Ratio VS = ±1.5V to ±6V (Note 6) q 60 85 60 85 dB –IPSRR Inverting Input Current VS = ±1.5V to ±6V (Note 6) 1.5 ±7 1.5 ±7 µA/V Power Supply Rejection q ±8 ±8 µA/V IS Supply Current per Amplifier 3 4.1 3 4.1 mA q 4.55 4.4 mA IOUT Maximum Output Current RL = 0Ω q ±70 ±45 mA (Notes 7, 11) ROL Transimpedance, ∆VOUT/∆IIN–VOUT = V+ –1.2V to V– +1.2V 65 120 65 120 k Ω SR Slew Rate (Note 8) 450 600 150 V/ µs tpd Propagation Delay 50% VIN to 50% VOUT, 3.1 4.7 ns 100mVP-P, Larger of tpd+, tpd– BW –3dB Bandwidth <1dB Peaking, AV = 1 100 70 MHz ts Settling Time To 0.1% of VFINAL, VSTEP = 2V 20 25 ns tf, tr Small-Signal Rise and Fall Time 10% to 90%, VOUT = 100mVP-P 3 5.6 ns dG Differential Gain (Note 9) 0.35 0.42 % dP Differential Phase (Note 9) 0.30 0.44 Deg HD2 2nd Harmonic Distortion f = 1MHz, VOUT = 2VP-P –65 –60 dBc HD3 3rd Harmonic Distortion f = 1MHz, VOUT = 2VP-P –65 –65 dBc V+ = 5V, V– = –5V, IS = 3mA V+ = 3V, V– = 0V, IS = 3mA ELECTRICAL CHARACTERISTICS V+ = 5V, V– = –5V, IS = 300µA V+ = 3V, V– = 0V, IS = 300µA (IS = 300µA per Amplifier) The q denotes specifications which apply over the specified operating temperature range, otherwise specifications are at TA = 25°C. For V+ = 5V, V– = – 5V: RSET = 1M to ground, AV = +2, RF = RG = 11k, RL = 1k; For V+ = 3V, V– = 0V: RSET = 270k to V –, AV = +2, RF = 9.31k, RG = 9.31k to 1.5V, RL = 1k to 1.5V unless otherwise specified. (IS = 3mA per Amplifier) The q denotes specifications which apply over the specified operating temperature range, otherwise specifications are at TA = 25°C. For V+ = 5V, V– = – 5V: RSET = 56k to ground, AV = +2, RF = RG = 1.1k, RL = 150Ω; For V+ = 3V, V– = 0V: RSET = 10k to V–, AV = +2, RF = 1.27k, RG = 1.27k to 1.5V, RL = 150Ω to 1.5V unless otherwise specified. |
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