MB10F datasheet(2/5 Pages) DIODES

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MB10F

Document number: DS39046 Rev. 3 - 2

2 of 5

www.diodes.com

March 2017

MB10F

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

1,000

RMS Reverse Voltage

VR(RMS)

700

Average Rectified Output Current (Note 5)

@ TA = +125°C

@TA = +110°C

0.5

0.8

Non-Repetitive Peak Forward Surge Current, 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

t Rating for Fusing (1ms < t < 8.3ms)

3.74

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance, Junction to Ambient (Note 6)

(Per Element)

RθJA

°C/W

Typical Thermal Resistance, Junction to Lead (Per Element)

RθJL

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 7)

V(BR)R

1,000

—

IR = 5μA

Forward Voltage (Per Element)

—

0.94

1.1

IF = 0.8A, TA = +25°C

Leakage Current (Note 7) (Per Element)

—

0.2

500

μA

VR = 1,000V, TA = +25°C

VR = 1,000V, TA = +125°C

Total Capacitance (Per Element)

—

VR = 4V, f = 1.0MHz

Notes:

5. Device mounted on FR-4 substrate, 1"*1", 2oz, single-sided, PC boards with 0.1"*0.15" copper pad.

6. Device mounted on FR-4 substrate, 1"*1", 2oz, single-sided, PC boards with 0.56"*0.73" copper pad.

7. Short duration pulse test used to minimize self-heating effect.

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