1 - 4

© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

V

DGR

T

J

= 25

°C to 150°C; R

800

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

A

I

DM

T

56

A

P

D

T

300

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

Max. lead temperature for soldering 300

°C

1.6 mm (0.063 in) from case for 10 s

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

6g

TO-247 AD

N-Channel Enhancement Mode

G = Gate,

D = Drain,

S = Source,

TAB = Drain

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

800

V

V

GS(th)

V

DS

= V

2

4.5

V

I

GSS

V

GS

=

±20 V

±100

nA

I

DSS

V

DS

= 0.8 • V

DSS

T

250

µA

V

GS

= 0 V

T

mA

R

DS(on)

V

GS

= 10 V, I

0.7

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

IXTH 14N80

V

DSS

= 800 V

I

D25

= 14 A

R

Ω

Ω

Ω

Ω

Features

l

International standard package

l

Low R

l

Rugged polysilicon gate cell structure

l

Low package inductance (< 5 nH)

- easy to drive and to protect

l

Fast switching times

Applications

l

Switch-mode and resonant-mode

power supplies

l

Motor control

l

Uninterruptible Power Supplies (UPS)

l

DC choppers

Advantages

l

Easy to mount with 1 screw

(isolated mounting screw hole)

l

Space savings

l

High power density

D (TAB)

96518F(12/97)

IXYS reserves the right to change limits, test conditions, and dimensions.