MMRF1022HS datasheet(2/16 Pages) NXP

2 / 16 page

RF Device Data

Freescale Semiconductor, Inc.

MMRF1022HS

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

–0.5, +65

Vdc

Gate--Source Voltage

VGS

–6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

–65 to +150

°C

Case Operating Temperature Range

–40 to +150

°C

Operating Junction Temperature Range (1)

–40 to +225

°C

CW Operation @ TC =25°C

Derate above 25°C

278

1.2

W/°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 73°C, 63 W Avg., W--CDMA, 28 Vdc, IDQA = 500 mA, VGSB =0.5 Vdc,

2140 MHz

RθJC

0.33

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2, passes 2500 V

Machine Model (per EIA/JESD22--A115)

B, passes 200 V

Charge Device Model (per JESD22--C101)

IV, passes 1200 V

Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (3)

Zero Gate Voltage Drain Leakage Current

(VDS =65 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS =32 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

μAdc

On Characteristics -- Side A (3)

Gate Threshold Voltage

(VDS =10 Vdc, ID = 140 μAdc)

VGS(th)

0.8

1.2

1.6

Vdc

Gate Quiescent Voltage

(VDD =28 Vdc, IDA = 500 mAdc, Measured in Functional Test)

VGSA(Q)

1.4

1.9

2.2

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID =1.4 Adc)

VDS(on)

0.1

0.2

0.3

Vdc

On Characteristics -- Side B (3)

Gate Threshold Voltage

(VDS =10 Vdc, ID = 240 μAdc)

VGS(th)

0.8

1.2

1.6

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID =2.4 Adc)

VDS(on)

0.1

0.2

0.3

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

3. Each side of device measured separately.

(continued)

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