MCC44-16io1B

I

TSM

I

FSM

[A]

1200

1000

800

600

400

200

0

t [s]

Fig. 1 Surge overload current

I

T

T

50 Hz, 80% V

RRM

V

t [ms]

1

2

3

6

8

10

T

T

Fig. 3 Maximum forward current

at case temperature

Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode)

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current

and ambient temperature

100

80

60

40

20

0

0

50

100

150

I

TAVM

[A]

T

DC

180° sin

120°

60°

30°

DC

180° sin

120°

60°

30°

0

50

100

150

T

I

0

20

40

60

80

120

100

80

60

40

20

0

P

T

[W]

R

thJA

[K/W]

1

1.5

2

2.5

3

4

5

6

R

thKA

[K/W]

0.1

0.15

0.2

0.25

0.3

0.4

0.5

0.6

0

50

100

150

T

I

0

50

100

P

tot

[W]

100

0

200

300

400

500

Circuit

B6

3x MCC44 or

3x MCD44

I

V

G

[V]

Fig. 5 Gate trigger characteristics

0.1

1

10

1: I

2: I

3: I

4: P

5: P

5 W

I

3

4

2

1

5

6

10

100

1000

1

10

100

1000

Limit

typ.

T

I

t

gd

[µs]

Fig. 7 Gate trigger delay time

Thyristor

IXYS reserves the right to change limits, conditions and dimensions.

20161222b

Data according to IEC 60747and per semiconductor unless otherwise specified

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