BGU2003 datasheet(3/8 Pages) PHILIPS

3 / 8 page

2002 May 17

Philips Semiconductors

Preliminary specification

SiGe MMIC amplifier

BGU2003

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

THERMAL CHARACTERISTICS

CHARACTERISTICS

RF input AC coupled; Tj =25 °C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

supply voltage

RF input AC coupled

−

4.5

VCTRL

voltage on control pin

−

supply current (DC)

forced by DC voltage on RF input

or ICTRL

−

ICTRL

control current

−

3mA

Ptot

total power dissipation

Ts ≤ 100 °C

−

135

Tstg

storage temperature

−65

+150

°C

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

350

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

supply current

VVS-OUT =2.5 V; ICTRL = 0.4 mA

2.5

4.5

6.5

VVS-OUT =2.5 V; ICTRL =1.0 mA

MSG

maximum stable gain

VVS-OUT =2.5 V; IVS-OUT =10mA;

f = 900 MHz

−

VVS-OUT =2.5 V; IVS-OUT =10mA;

f = 1800 MHz

−

21|

insertion power gain

VVS-OUT =2.5 V; IVS-OUT =10mA;

f = 900 MHz

−

VVS-OUT =2.5 V; IVS-OUT =10mA;

f = 1800 MHz

−

s12

isolation

VVS-OUT =2.5 V; IVS-OUT =0;

f = 900 MHz

−

VVS-OUT =2.5 V; IVS-OUT =0;

f = 1800 MHz

−

noise figure

VVS-OUT =2.5 V; IVS-OUT =10mA;

f = 900 MHz;

S = Γopt

−

1.0

VVS-OUT =2.5 V; IVS-OUT =10mA;

f = 1800 MHz;

S = Γopt

−

1.1

IP3(out)

output intercept point;

ZS =ZL 50 Ω

VVS-OUT =2.3 V; IVS-OUT =10mA;

f = 900 MHz

−

dBm

VVS-OUT =2.3 V; IVS-OUT =10mA;

f = 1800 MHz

−

dBm

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