APM2314 datasheet(2/9 Pages) ANPEC

2 / 9 page

Rev. A.1 - Jun., 2003

www.anpec.com.tw

APM2314

Notes

: Pulse test ; pulse width

≤300µs, duty cycle ≤ 2%

: Guaranteed by design, not subject to production testing

Absolute Maximum Ratings (Cont.) (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

A=25

°C

1.25

Maximum Power Dissipation

A=100

°C

0.5

Maximum Junction Temperature

150

°C

STG

Storage Temperature Range

-55 to 150

°C

θjA

Thermal Resistance – Junction to Ambient

100

°C/W

APM2314

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static

BVDSS

Drain-Source Breakdown

Voltage

VGS=0V , IDS=250

µA

IDSS

Zero Gate Voltage Drain

Current

VDS=16V , VGS=0V

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS , IDS=250

µA

0.5

0.7

IGSS

Gate Leakage Current

VGS=

±10V , VDS=0V

±100

VGS=4.5V , IDS=1.2A

RDS(ON)a

Drain-Source On-state

Resistance

VGS=2.5V , IDS=0.8A

Ω

VSDa

Diode Forward Voltage

ISD=0.5A , VGS=0V

0.75

1.3

Dynamicb

Total Gate Charge

6.5

Qgs

Gate-Source Charge

0.9

Qgd

Gate-Drain Charge

VDS=10V , IDS= 3A

VGS=4.5V

0.9

td(ON)

Turn-on Delay Time

615

Turn-on Rise Time

511

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

VDD=10V , IDS=1A,

VGEN=4.5V , RG=6

Ω,

RL=10

Ω

615

Ciss

Input Capacitance

435

Coss

Output Capacitance

120

Crss

Reverse Transfer Capacitance

VGS=0V

VDS=15V

Frequency=1.0MHz

Electrical Characteristics (T

A = 25°C unless otherwise noted)

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