The FT28C16 is accessed like a static RAM for the read or

write cycles without the need of external components. Dur-

ing a byte write, the address and data are latched inter-

nally, freeing the microprocessor address and data bus for

other operations. Following the initiation of a write cycle,

the device will go to a busy state and automatically clear

and write the latched data using an internal control timer.

The end of a write cycle can be determined by DATA

detected, a new access for a read or a write can begin.

The CMOS technology offers fast access times of 150 ns at

low power dissipation. When the chip is deselected the

standby current is less than 100 µA.

Force's 28C16 has additional features to ensure high qual-

ity and manufacturability. The device utilises error correc-

tion internally for extended endurance and for improved

data retention characteristics. An ex tra 32 by tes of

EEPROM are available for device identification or tracking.

Block Diagram

Absolute Maximum Ratings*

Temperature Under Bias................................ -55°C to +125°C

*NOTICE:

Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam-

age to the device. This is a stress rating only and

functional operation of the device at these or any

other conditions beyond those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating

conditions for extended periods may affect

device reliability

Storage Temperature ..................................... -65°C to +150°C

All Input Voltages (including NC Pins)

with Respect to Ground ...................................-0.6V to +6.25V

All Output Voltages

Voltage on OE and A9

with Respect to Ground ...................................-0.6V to +13.5V

FT28C16

Parallel EEPROM 16K (2Kx8)

Rev 2

2/12

2011