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FT27C010 датащи(PDF) 1 Page - Force Technologies Ltd |
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FT27C010 датащи(HTML) 1 Page - Force Technologies Ltd |
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1 / 11 page ![]() 1 Features • Fast Read Access Time - 45 ns • Low-Power CMOS Operation – 100 µA max. Standby – 25 mA max. Active at 5 MHz (FT27C010L) – 35 mA max. Active at 5 MHz (FT27C010) • JEDEC Standard Packages – 32-Lead CDIL/LCC/JLCC +Custom Ceramic packages • 5V ± 10% Supply • High Reliability CMOS Technology – 2000V ESD Protection – 200 mA Latchup Immunity • Programming Algorithm - 100 µs/byte (typical) • CMOS and TTL Compatible Inputs and Outputs • Integrated Product Identification Code • Commercial, Industrial and Automotive Temperature Ranges. MILITARY-Contact sales Description The FT27C010(L) is a low-power, high-performance 1,048,576-bit UV erase/program- mable read only memory (UVEPROM) organised as 128K by 8 bits. They require only one 5V power supply in normal read mode operation. Any byte can be accessed in less than 45 ns, eliminating the need for speed reducing WAIT states on high-per- formance microprocessor systems. Two power versions are offered. In read mode, the FT27C010 typically consumes 25 mA while the FT27C010L requires only 8 mA. Standby mode supply current for both parts is typically less than 10 µA. 1-Megabit (128K x 8) UVEPROM FT27C010(L) 1M bit EPROM Pin Configurations Pin Name Function A0 - A16 Addresses O0 - O7 Outputs CE Chip Enable OE Output Enable PGM Program Strobe NC No Connect CDIL Top View 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND VCC PGM NC A14 A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 CLCC/JLCC Top View 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A7 A6 A5 A4 A3 A2 A1 A0 O0 A14 A13 A8 A9 A11 OE A10 CE O7 2006 1/11 Rev 1 |
Аналогичный номер детали - FT27C010 |
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Аналогичное описание - FT27C010 |
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