HS1DDF datasheet(2/6 Pages) DIODES

2 / 6 page

HS1DDF

Document number: DS39665 Rev. 3 - 2

2 of 6

www.diodes.com

April 2018

HS1DDF

Maximum Ratings and Electrical Characteristics (@TA = +25°C unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

200

Average Rectified Output Current @TC = +88°C (Note 5)

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on Rated Load

IFSM

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance Junction to Terminal (Note 6)

RθJT

°C/W

Typical Thermal Resistance Junction to Ambient (Note 6)

RθJA

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Notes:

5. Device mounted on FR-4 substrate, 1" x 1", 2oz, single-sided, PC boards with 0.1" x 0.15" copper pad.

6. Device mounted on FR-4 substrate, 0.4" x 0.5", 2oz, single-sided, PC boards with 0.2" x 0.25" copper pad.

7. Short duration pulse test used to minimize self-heating effect.

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 7)

V(BR)R

200

—

IR = 10µA

Forward Voltage Drop

—

0.87

0.91

0.71

1.1

1.2

—

IF = 1A, TJ = +25°C

IF = 1.5A, TJ = +25°C

IF = 1A, TJ = +125°C

Leakage Current (Note 7)

—

0.02

1.2

100

µA

VR = 200V, TJ = +25°C

VR = 200V, TJ = +125°C

Reverse Recovery Time

tRR

—

IF = 0.5A, IR = 1.0A, IRR = 0.25A

Total Capacitance

—

VR = 4.0VDC, f = 1MHz

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