Feb.1999

3.8

0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4

7

5

3

2

7

5

3

2

7

5

3

2

23

23

44

30

35

20

25

10

15

5

40

0

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR3PM

LOW POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

Symbol

Parameter

Repetitive peak off-state current

On-state voltage

Gate trigger voltage

V2

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltage

Test conditions

Unit

mA

V

V

V

V

mA

mA

mA

V

°C/W

V/

µs

Typ.

—

—

—

—

—

—

—

—

—

—

—

!

@

#

!

@

#

ELECTRICAL CHARACTERISTICS

Limits

Min.

—

—

—

—

—

—

—

—

0.2

—

V3

Max.

2.0

1.5

1.5

1.5

1.5

30

V5

30

V5

—

4.5

—

V2. Measurement using the gate trigger characteristics measurement circuit.

V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.

°C/W.

≤10mA) is also available.

PERFORMANCE CURVES

Test conditions

Voltage

class

8

12

(V)

400

600

Commutating voltage and current waveforms

(inductive load)

SUPPLY

VOLTAGE

TIME

TIME

TIME

MAIN CURRENT

MAIN

VOLTAGE

(di/dt)c

(dv/dt)c

Min.

5

Unit

V/

µs

1. Junction temperature

°C

2. Rate of decay of on-state commutating current

3. Peak off-state voltage