AOC2804B datasheet(1/5 Pages) AOSMD

номер детали	AOC2804B

подробное описание детали	20V Common-Drain Dual N-Channel AlphaMOS

PDF	5 Pages

Scroll/Zoom	100%

производитель	AOSMD [Alpha & Omega Semiconductors]

домашняя страница	http://www.aosmd.com

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AOC2804B

General Description

Product Summary

VSS

RSS(ON) (at VGS=4.5V)

< 34mΩ

RSS(ON) (at VGS=4.0V)

< 38mΩ

RSS(ON) (at VGS=3.7V)

< 40mΩ

RSS(ON) (at VGS=3.1V)

< 45mΩ

RSS(ON) (at VGS=2.5V)

< 56mΩ

Applications

Typical ESD protection

HBM Class 3A

Symbol

VSS

20V Common-Drain Dual N-Channel AlphaMOS

Orderable Part Number

Package Type

Form

Minimum Order Quantity

20V

• Trench Power AlphaMOS (αMOS LV) technology

• Low RSS(ON)

• Fully protected AlphaDFN package

• With ESD protection to improve battery performance and safety

• Common drain configuration for design simplicity

• RoHS and Halogen-Free Compliant

• Battery protection switch

• Mobile device battery charging and discharging

Rating

Units

AOC2804B

AlphaDFN 1.5x1.5_4

Tape & Reel

3000

20

Parameter

Source-Source Voltage

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

AlphaDFN 1.5x1.5_4

Top View

Bottom View

G1

D1

S1

Top View

Bottom View

Pin1

2

1

3

4

G2

D2

S2

G2

S2

S1

G1

VSS

VGS

TA=25°C

IS

ISM

TA=25°C

PD

TJ, TSTG

Symbol

t ≤ 10s

Steady-State

Note 1. Is rated value is based on bare silicon. Mounted on 70mmx70mm FR-4 board.

Note 2. PW <10 µs pulses, duty cycle 1% max.

Thermal Characteristics

W

60

6

Source Current(DC)

Note1

Power Dissipation

Note1

A

Typ

Parameter

°C

Units

Junction and Storage Temperature Range

-55 to 150

Maximum Junction-to-Ambient

°C/W

RθJA

°C/W

Maximum Junction-to-Ambient

85

96

20

1.3

Gate-Source Voltage

Source Current(Pulse)

Note2

Source-Source Voltage

V

±12

V

Rev.1.0: July 2015

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