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X9268 датащи(PDF) 16 Page - Renesas Technology Corp |
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X9268 датащи(HTML) 16 Page - Renesas Technology Corp |
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16 / 22 page ![]() X9268 FN8172 Rev.4.00 Page 16 of 22 August 29, 2006 D.C. OPERATING CHARACTERISTICS (Over the recommended operating conditions unless otherwise specified.) ENDURANCE AND DATA RETENTION CAPACITANCE POWER-UP TIMING POWER-UP AND DOWN REQUIREMENTS The are no restrictions on the sequencing of the bias supplies VCC, V+, and V- provided that all three supplies reach their final values within 1msec of each other. At all times, the voltages on the potentiometer pins must be less than V+ and more than V-. The recall of the wiper position from nonvolatile memory is not in effect until all supplies reach their final value. The VCC ramp rate spec is always in effect. A.C. TEST CONDITIONS Notes: (6) This parameter is not 100% tested (7) tPUR and tPUW are the delays required from the time the (last) power supply (VCC-) is stable until the specific instruction can be issued. These parameters are periodically sampled and not 100% tested. Symbol Parameter Test Conditions Min. Typ. Max. Units ICC1 VCC supply current (active) fSCL = 400kHz; VCC = +6V; SDA = Open; (for 2-Wire, Active, Read and Volatile Write States only) 3mA ICC2 VCC supply current (nonvolatile write) fSCL = 400kHz; VCC = +6V; SDA = Open; (for 2-Wire, Active, Nonvolatile Write State only) 5mA ISB VCC current (standby) VCC = +6V; VIN = VSS or VCC; SDA = VCC; (for 2-Wire, Standby State only) 5 A ILI Input leakage current VIN = VSS to VCC 10 A ILO Output leakage current VOUT = VSS to VCC 10 A VIH Input HIGH voltage VCC x 0.7 VCC + 1 V VIL Input LOW voltage -1 VCC x 0.3 V VOL Output LOW voltage IOL = 3mA 0.4 V VOH Output HIGH voltage Parameter Min. Units Minimum endurance 100,000 Data changes per bit per register Data retention 100 years Symbol Test Max. Units Test Conditions CIN/OUT(6) Input / Output capacitance (SDA) 8 pF VOUT = 0V CIN(6) Input capacitance (SCL, WP, A3, A2, A1 and A0)6 pF VIN = 0V Symbol Parameter Min. Max. Units tr VCC(6) VCC Power-up rate 0.2 50 V/ms tPUR(7) Power-up to initiation of read operation 1 ms Input Pulse Levels VCC x 0.1 to VCC x 0.9 Input rise and fall times 10ns Input and output timing level VCC x 0.5 |
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