FSB50825AS datasheet(5/11 Pages) ONSEMI

5 / 11 page

www.fairchildsemi.com

FSB50825AS Rev. 1.6

Electrical Characteristics (T

J = 25°C, VCC = VBS = 15 V unless otherwise specified.)

Inverter Part (each MOSFET unless otherwise specified.)

Control Part (each HVIC unless otherwise specified.)

Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)

2nd Notes:

1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM

® 5 product. V

PN should be sufficiently less than this

value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case.

2. tON and tOFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field

applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.

3. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test

circuit that is same as the switching test circuit.

4. Vts is only for sensing-temperature of module and cannot shutdown MOSFETs automatically.

5. Built-in bootstrap diode includes around 15

resistance characteristic. Please refer to Figure 2.

Symbol

Parameter

Conditions

Min

Typ Max

Unit

BVDSS

Drain - Source

Breakdown Voltage

VIN = 0 V, ID = 1 mA (2nd Note 1)

250

IDSS

Zero Gate Voltage

Drain Current

VIN = 0 V, VDS = 250 V

RDS(on)

Static Drain - Source

Turn-On Resistance

VCC = VBS = 15 V, VIN = 5 V, ID = 2.0 A

0.33

0.45



VSD

Drain - Source Diode

Forward Voltage

VCC = VBS = 15V, VIN = 0 V, ID = -2.0 A

1.2

tON

Switching Times

VPN = 150 V, VCC = VBS = 15 V, ID = 2.0 A

VIN = 0 V  5 V, Inductive Load L = 3 mH

High- and Low-Side MOSFET Switching

(2nd Note 2)

950

tOFF

520

trr

150

EON

100

J

EOFF

-10-

J

RBSOA

Reverse Bias Safe Oper-

ating Area

VPN = 200 V, VCC = VBS = 15 V, ID = IDP, VDS = BVDSS,

TJ = 150°C

High- and Low-Side MOSFET Switching (2nd Note 3)

Full Square

Symbol

Parameter

Conditions

Min

Typ Max

Unit

IQCC

Quiescent VCC Current

VCC = 15 V,

VIN = 0 V

Applied Between VCC and COM

200

A

IQBS

Quiescent VBS Current

VBS = 15 V,

VIN = 0 V

Applied Between VB(U) - U,

VB(V) - V, VB(W) - W

100

A

UVCCD

Low-Side Under-Voltage

Protection (Figure 8)

VCC Under-Voltage Protection Detection Level

7.4

8.0

9.4

UVCCR

VCC Under-Voltage Protection Reset Level

8.0

8.9

9.8

UVBSD

High-Side Under-Voltage

Protection (Figure 9)

VBS Under-Voltage Protection Detection Level

7.4

8.0

9.4

UVBSR

VBS Under-Voltage Protection Reset Level

8.0

8.9

9.8

VTS

HVIC Temperature Sens-

ing Voltage Output

VCC = 15 V, THVIC = 25°C (2nd Note 4)

600

790

980

VIH

ON Threshold Voltage

Logic HIGH Level

Applied between IN and COM

2.9

VIL

OFF Threshold Voltage

Logic LOW Level

0.8

Symbol

Parameter

Conditions

Min

Typ Max

Unit

VFB

Forward Voltage

IF = 0.1 A, TC = 25°C (2nd Note 5)

2.5

trrB

Reverse Recovery Time

IF = 0.1 A, TC = 25°C

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